SK Hynix’s new 4D NAND uses a charge trap design

SK Hynix’s new 4D NAND uses a charge trap design, just like the flash produced by Samsung and WD/Toshiba. SK Hynix has used Charge Trap Flash (CTF) designs for several years, so it isn’t new, and currently Micron and Intel are the only two flash-fabbers using floating gate technology. Intel and Micron plan to diverge on their flash development efforts after their next-gen flash comes to market, after which Micron will use its own ‘Replacement Gate’ technology, which is simply a re-branded Charge Trap Flash design. In other words, Intel will soon be the only flash producer using floating gate technology.

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