UFS list of Samsung
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SDM855+ of Qualcomm
The new Qualcomm Snapdragon 855 Plus will power the gaming smartphones of tomorrow The Adreno 640 GPU inside the 855 Plus is 15 percent more powerful than the regular Snapdragon 855 chipset. Qualcomm announced its flagship Snapdragon 855 SoC as the chipset engineered for the premium handsets of 2019. The 855 chipset replaced second-generation 10nm
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SDM855 Snapdragon 855
Snapdragon 855: phones list, specs and benchmarks Here are the capabilities of the Snapdragon 855 and the phones that get them There’s a good chance that the Qualcomm Snapdragon 855 chipset is powering your smartphone if you bought a new device in 2019 and it’s an Android. This small, 7nm chip delivers some impressive performance
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The Evolution of LPDDR4 to LPDDR4x
The Evolution of LPDDR4 to LPDDR4X LPDDR4 was introduced in 2014 about two years after LPDDR3. This was probably the fastest transition for a new generation memory ever in JEDEC history. New products and features being introduced into the mobile ecosystem requiring faster and lower power memory propelled the fast development. LPDDR4 succeeded in increasing
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Micron Part Number List
FBGA Code Part Number *The following Part Number and FBGA Codes are not one-to-one 134395 AMD15V128X16JT-107G C:K 134414 AMD15V128X16JT-107G P:K 134425 AMD15V128X16JT-125G C:K 134442 AMD41J128M16HA-107G D:D 138586 AMD41J128M16HA-125G D:D 79JMM AMD41J64M16JT-107G D:G 9DHZ AMD41J64M16JT-125G D:G 9DJB AMDJ128M16JT-107G C:K 9LZV AMDJ128M16JT-107G P:K 9LZW CT40A1G8PM-083E:A 071 9MBP CT40A1G8PM-083E:A 075 9MBQ CT40A1G8PM-083E:A 83E 9MBR CT40A256M16GE-075E:B 9MBS CT40A512M16JY-083E:B 9MBT
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Samsung introducing the industry’s first 8-gigabyte (GB) LPDDR4 (low power, double data rate 4) mobile DRAM package
Samsung Electronics, announced today that it is introducing the industry’s first 8-gigabyte (GB) LPDDR4 (low power, double data rate 4) mobile DRAM package, which is expected to greatly improve mobile user experiences, especially for those using Ultra HD, large-screen devices. The 8GB mobile DRAM package utilizes four of the newest 16 gigabit (Gb) LPDDR4 memory
New 8Gb DDR4 based on most advanced 1z-nm process enables DRAM solutions with ultra-high performance and power efficiency
New 8Gb DDR4 based on most advanced 1z-nm process enables DRAM solutions with ultra-high performance and power efficiency The 1z-nm 8Gb DDR4 to be in mass production in the second half of this year Samsung Electronics, the world leader in advanced memory technology, today announced that it has developed a 3rd-generation 10-nanometer-class (1z-nm) eight-gigabit (Gb)
Samsung Electronics Doubling Current Smartphone Storage Speed as it Begins Mass Production of Industry-First 512GB eUFS 3.0
Based on the company’s fifth-generation V-NAND, the new memory meets the newest Universal Flash Storage industry specifications at a speed 20x faster than a typical microSD card Samsung plans to launch a 1-Terabyte version within the second half of the year eUFS 512GB UFS 3.0 front and back. SEOUL, Korea ― February 27, 2019 ―
SKhynix Part Number List
eMMC Part Number Density Product NAND Info. Package Size Package Type H26M31001HPR 4GB eMMC4.5 1ynm 32Gb 11.5x13x0.8 153ball FBGA H26M41208HPR 8GB eMMC5.1 1ynm 64Gb 11.5x13x0.8 153ball FBGA H26M52208FPR 16GB eMMC5.1 1ynm 64Gb 11.5x13x0.8 153ball FBGA H26M51002KPR 16GB eMMC5.1 1znm 128Gb 11.5x13x0.8 153ball FBGA H26M64208EMR 32GB eMMC5.1 1ynm 64Gb 11.5x13x1.0 153ball FBGA H26M62002JPR 32GB eMMC5.1 1znm
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