UFS list of Samsung

/ Part Number List

[one_fifth]P/N KLUBG4G1ZF-B0CP KLUBG4G1ZF-B0CQ KLUCG2K1EA-B0C1 KLUCG4J1ED-B0C1 KLUCG4J1ZD-B0CP KLUCG4J1ZD-B0CQ KLUDG4U1EA-B0C1 KLUDG4U1FB-B0C1 KLUDG4UHDB-B2D1 KLUDG8J1ZD-B0CP KLUDG8J1ZD-B0CQ KLUEG8U1EA-B0C1 KLUEG8U1FB-B0C1 KLUEG8UHDB-C2D1 KLUEGAJ1ZD-B0CP KLUEGAJ1ZD-B0CQ KLUFG8R1EM-B0C1 KLUFG8RHDA-B2D1 KLUGGAR1FA-B2C1 KLUGGARHDA-B0D1 [/one_fifth][one_fifth]Description 32GB_UFS 2.1_1.8/3.3V 32GB_UFS 2.1_1.8/3.3V 64GB_UFS 2.1_1.8/3.3V 64GB_UFS 2.1_1.8/3.3V 64GB_UFS 2.1_1.8/3.3V 64GB_UFS 2.1_1.8/3.3V 128GB_UFS 2.1_1.8/3.3V 128GB_UFS 2.1_1.8/3.3V 128GB_UFS 3.0_1.2/2.5V 128GB_UFS 2.1_1.8/3.3V 128GB_UFS 2.1_1.8/3.3V 256GB_UFS 2.1_1.8/3.3V 256GB_UFS 2.1_1.8/3.3V 256GB_UFS 3.0_1.2/2.5V 256GB_UFS 2.1_1.8/3.3V 256GB_UFS 2.1_1.8/3.3V 512GB_UFS […]

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SDM855+ of Qualcomm

/ Memory News

The new Qualcomm Snapdragon 855 Plus will power the gaming smartphones of tomorrow The Adreno 640 GPU inside the 855 Plus is 15 percent more powerful than the regular Snapdragon 855 chipset. Qualcomm announced its flagship Snapdragon 855 SoC as the chipset engineered for the premium handsets of 2019. The 855 chipset replaced second-generation 10nm

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SDM855 Snapdragon 855

/ Memory News

Snapdragon 855: phones list, specs and benchmarks Here are the capabilities of the Snapdragon 855 and the phones that get them There’s a good chance that the Qualcomm Snapdragon 855 chipset is powering your smartphone if you bought a new device in 2019 and it’s an Android. This small, 7nm chip delivers some impressive performance

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The Evolution of LPDDR4 to LPDDR4x

/ Memory News

The Evolution of LPDDR4 to LPDDR4X LPDDR4 was introduced in 2014 about two years after LPDDR3. This was probably the fastest transition for a new generation memory ever in JEDEC history. New products and features being introduced into the mobile ecosystem requiring faster and lower power memory propelled the fast development. LPDDR4 succeeded in increasing

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Micron Part Number List

/ Part Number List

FBGA Code Part Number  *The following Part Number and FBGA Codes are not one-to-one 134395 AMD15V128X16JT-107G C:K 134414 AMD15V128X16JT-107G P:K 134425 AMD15V128X16JT-125G C:K 134442 AMD41J128M16HA-107G D:D 138586 AMD41J128M16HA-125G D:D 79JMM AMD41J64M16JT-107G D:G 9DHZ AMD41J64M16JT-125G D:G 9DJB AMDJ128M16JT-107G C:K 9LZV AMDJ128M16JT-107G P:K 9LZW CT40A1G8PM-083E:A 071 9MBP CT40A1G8PM-083E:A 075 9MBQ CT40A1G8PM-083E:A 83E 9MBR CT40A256M16GE-075E:B 9MBS CT40A512M16JY-083E:B 9MBT

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Common bill of materials

/ Part Number List

[one_half] KLUEG8ULEM-B0C1 H9CKNNNBPTATJR-NUH H9HKNNNCRMAVAR-NEN H9HCNNNCPUMLHR-NMN H9HCNNNBKUMLHR-NEO H9HCNNNBKMMLHR-NMI H9HCNNN8KUMLHR-NMI H26M78208CMRI H26M78208CMRA H26M52208FPRQ H26M52208FPRA EMMC32G-TA28 SDM-845-1-914BMPSP-TR-02-0-AA K3QF6F60MM-QGCF H9CKNNNDATATDR-NUH H9HKNNNCTUMUBR-NLH H9CCNNNBJTALAR-NUD H9CCNNNBJTALAR-NVD SU512M32Z11MD2DDS-053BT SU512M32Z11MD2DDS-062BT H9HCNNNBKMMLHR-NME H9HCNNN8KUMLHR-NLN H9HCNNN8KUMLHR-NME H9HCNNN8KUMLHR-NMN H9HCNNN8KUMLHR-NHN H9HCNNN8KUMLHR-NLE H9CCNNN8JTALAR-NUM H9CCNNN8JTALAR-NUD H9CCNNN8JTALAR-NTD H9CCNNN8JTALAR-NTM H9HCNNNBPUMLHR-NHM K3PE0E00QM-CGC2 H9CKNNNBKTMTDR-NUH H9CCNNNBLTMLAR-NTM H9CCNNNBJTMLAR-NTD H9HCNNNBPUMLHR-NMN H9HCNNNBPUMLHR-NMO H9HCNNNBPUMLHR-NLN H9HCNNNBPUMLHR-NME H9HCNNNBPUMLHR-NLE DVFD8187BE1ABC V59C1G01168QEJ25 TYE0HH221668RA TYE0HH231659RA V59C1512164QFJ25 TYC0FH121642RA TYD0GH221651RA TYD0GH231624RC THGLF2G8J4LBATA TMS320F28027PTT TW282ICM1SFSC TW562ICM1SFBC THGBMHG9C4LBAIR THGBMHG9C8LBAIG

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Samsung introducing the industry’s first 8-gigabyte (GB) LPDDR4 (low power, double data rate 4) mobile DRAM package

/ Memory News

Samsung Electronics, announced today that it is introducing the industry’s first 8-gigabyte (GB) LPDDR4 (low power, double data rate 4) mobile DRAM package, which is expected to greatly improve mobile user experiences, especially for those using Ultra HD, large-screen devices. The 8GB mobile DRAM package utilizes four of the newest 16 gigabit (Gb) LPDDR4 memory

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New 8Gb DDR4 based on most advanced 1z-nm process enables DRAM solutions with ultra-high performance and power efficiency

/ Memory News

New 8Gb DDR4 based on most advanced 1z-nm process enables DRAM solutions with ultra-high performance and power efficiency The 1z-nm 8Gb DDR4 to be in mass production in the second half of this year Samsung Electronics, the world leader in advanced memory technology, today announced that it has developed a 3rd-generation 10-nanometer-class (1z-nm) eight-gigabit (Gb)

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Samsung Electronics Doubling Current Smartphone Storage Speed as it Begins Mass Production of Industry-First 512GB eUFS 3.0

/ Memory News

Based on the company’s fifth-generation V-NAND, the new memory meets the newest Universal Flash Storage industry specifications at a speed 20x faster than a typical microSD card Samsung plans to launch a 1-Terabyte version within the second half of the year eUFS 512GB UFS 3.0 front and back. SEOUL, Korea ― February 27, 2019 ―

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SKhynix Part Number List

/ Part Number List

eMMC Part Number Density Product NAND Info. Package Size Package Type H26M31001HPR 4GB eMMC4.5 1ynm 32Gb 11.5x13x0.8 153ball FBGA H26M41208HPR 8GB eMMC5.1 1ynm 64Gb 11.5x13x0.8 153ball FBGA H26M52208FPR 16GB eMMC5.1 1ynm 64Gb 11.5x13x0.8 153ball FBGA H26M51002KPR 16GB eMMC5.1 1znm 128Gb 11.5x13x0.8 153ball FBGA H26M64208EMR 32GB eMMC5.1 1ynm 64Gb 11.5x13x1.0 153ball FBGA H26M62002JPR 32GB eMMC5.1 1znm

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