LPDDR4x Part Number Density Org. Speed Voltage Temp. Package K3UH5H50AM-AGCL 32Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA K3UH5H50AM-EGCL 32Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA K3UH6H60BM-AGCL 48Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 […]
Samsung Part Number List Read More »
Part Number Configuration Package Pin Count SF256M32Z00MD2CDS-053BT 8G LPDDR4 VFBGA 200 BALL SM128M32Z00ND1BNP-062FT 4G LPDDR4 VFBGA 200 BALL SM128M32Z00ND1BNP-075BT 4G LPDDR4 VFBGA 200 BALL SM128M32Z19MD2DDS-062BT 4G LPDDR4 VFBGA 200 BALL SM1G32Z01MD4BNQ-062BT 32G LPDDR4 VFBGA 200 BALL SM1G32Z11MD4DDT-062BT 32G LPDDR4 VFBGA 200 BALL SM1G64Z11ND8DNW-053BT 64G LPDDR4 VFBGA 432 BALL SM256M32Z01MD1BNP-062BT 8G LPDDR4 VFBGA 200 BALL SM256M32Z01MD1BNP-062FT
Spectek Part Number List Read More »
Samsung Offering smaller package size and higher capacity, up to 8GB, Samsung’s breakthrough LPDDR4X is enabling the next evolution of ultra-slim mobile devices.
Samsung Offering smaller package size and higher capacity up to 8GB Read More »
SK Hynix’s new 4D NAND uses a charge trap design, just like the flash produced by Samsung and WD/Toshiba. SK Hynix has used Charge Trap Flash (CTF) designs for several years, so it isn’t new, and currently Micron and Intel are the only two flash-fabbers using floating gate technology. Intel and Micron plan to diverge
SK Hynix’s new 4D NAND uses a charge trap design Read More »